Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -8.00 A
Technical parameters/Input capacitance (Ciss): 1945pF @10V(Vds)
Technical parameters/rated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4943CDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
Dual MOSFET, Dual P Channel, -8A, -20V, 0.0275Ω, -4.5V, -1V
|
||
SI4943CDY-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
Dual MOSFET, Dual P Channel, -8A, -20V, 0.0275Ω, -4.5V, -1V
|
||
SI4943CDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
Dual MOSFET, Dual P Channel, -8A, -20V, 0.0275Ω, -4.5V, -1V
|
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