Technical parameters/drain source resistance: 12 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10.7A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1535pF @15V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 5.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4890BDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 30V 16A 8-SOIC
|
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