Technical parameters/dissipated power: 2.5W (Ta), 5.7W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1535pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 5.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4890BDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 30V 16A 8-SOIC
|
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