Technical parameters/drain source resistance: 9.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 13.5 A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 70 ns
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4466DY
|
Vishay Semiconductor | 功能相似 | SO |
单N沟道2.5V指定的PowerTrench MOSFET Single N-Channel 2.5V Specified PowerTrench MOSFET
|
||
SI4466DY
|
Vishay Siliconix | 功能相似 | SOIC |
单N沟道2.5V指定的PowerTrench MOSFET Single N-Channel 2.5V Specified PowerTrench MOSFET
|
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