Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4466DY
|
Vishay Semiconductor | 功能相似 | SO |
单N沟道2.5V指定的PowerTrench MOSFET Single N-Channel 2.5V Specified PowerTrench MOSFET
|
||
SI4466DY
|
Vishay Siliconix | 功能相似 | SOIC |
单N沟道2.5V指定的PowerTrench MOSFET Single N-Channel 2.5V Specified PowerTrench MOSFET
|
||
SI4466DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N T/R
|
||
SI4466DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N T/R
|
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