Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 4.4A/3.7A
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4511DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N/P-CH 20V 7.2A 8-SOIC
|
||
SI4532CDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SILICONIX SI4532CDY-T1-GE3 场效应管, MOSFET, NP-通道, 30V, 6/-4.3A, SOIC-8
|
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