Technical parameters/drain source resistance: 8.8 mΩ
Technical parameters/dissipated power: 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Cut Tape (CT)
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4425DDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4425DDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4427BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET P-CH 30V 9.7A 8-SOIC
|
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