Technical parameters/drain source resistance: 0.0225 Ω
Technical parameters/dissipated power: 2.7 W
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 335pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.7W (Ta), 2.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2312CDS-T1-GE3
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Vishay Intertechnology | 功能相似 | SOT-23-3 |
VISHAY SI2312CDS-T1-GE3 MOSFET Transistor, N Channel, 6A, 20V, 26500Ω, 4.5V, 450mV
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SI2312CDS-T1-GE3
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VISHAY | 功能相似 | SOT-23-3 |
VISHAY SI2312CDS-T1-GE3 MOSFET Transistor, N Channel, 6A, 20V, 26500Ω, 4.5V, 450mV
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SI2312CDS-T1-GE3
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Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SI2312CDS-T1-GE3 MOSFET Transistor, N Channel, 6A, 20V, 26500Ω, 4.5V, 450mV
|
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