Technical parameters/drain source resistance: 0.023 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/threshold voltage: 800 mV
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.14W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMN35EN
|
NXP | 功能相似 | SOT-457 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
SI3424DV-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 5A 6-TSOP
|
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