Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.025 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.1A
Technical parameters/Input capacitance (Ciss): 334pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4.17 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-457
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-457
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Manufacturing Applications: Automation & Process Control, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3424DV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
VISHAY SI3424DV-T1-E3 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.023 ohm, 10 V, 800 mV
|
||
SI3424DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
VISHAY SI3424DV-T1-E3 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.023 ohm, 10 V, 800 mV
|
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