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Model SI3459BDV-T1-GE3
Description MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 0.18Ω, Id -2.2A, TSOP-6, Pd 2W
Product QR code
Brand: Vishay Siliconix
Packaging TSOT-23-6
Delivery time
Packaging method
Standard packaging quantity 1
1.82  yuan 1.82yuan
5+:
$ 2.4530
25+:
$ 2.2713
50+:
$ 2.1441
100+:
$ 2.0896
500+:
$ 2.0532
2500+:
$ 2.0078
5000+:
$ 1.9896
10000+:
$ 1.9624
Quantity
5+
25+
50+
100+
500+
Price
$2.4530
$2.2713
$2.1441
$2.0896
$2.0532
Price $ 2.4530 $ 2.2713 $ 2.1441 $ 2.0896 $ 2.0532
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5291) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.288 Ω

Technical parameters/dissipated power: 3.3 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 350pF @30V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2W (Ta), 3.3W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3.1 mm

External dimensions/width: 1.65 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3459DV-T1-E3 SI3459DV-T1-E3 Vishay Siliconix 类似代替 TSOT-23-6
Mosfet p-Ch 60V 2.2A 6-Tsop
PDF
SI3459DV-T1-E3 SI3459DV-T1-E3 Vishay Semiconductor 类似代替 TSOP-6
Mosfet p-Ch 60V 2.2A 6-Tsop
PDF

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