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Model SI3459DV-T1-E3
Description Mosfet p-Ch 60V 2.2A 6-Tsop
Product QR code
Brand: Vishay Siliconix
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5873) Minimum order quantity(1)
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Technical parameters/drain source resistance: 220 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2W (Ta)

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): -2.20 A to 2.20 A

Technical parameters/dissipated power (Max): 2W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3.05 mm

External dimensions/width: 1.65 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 VISHAY 类似代替 TSOP-6
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 0.18Ω, Id -2.2A, TSOP-6, Pd 2W
PDF
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 Vishay Siliconix 类似代替 TSOT-23-6
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 0.18Ω, Id -2.2A, TSOP-6, Pd 2W
PDF

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