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Model SI3585CDV-T1-GE3
Description VISHAY SI3585CDV-T1-GE3 Dual field-effect transistor, MOSFET, N and P channels, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
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Brand: Vishay Semiconductor
Packaging TSOP
Delivery time
Packaging method
Standard packaging quantity 1
3.4  yuan 3.4yuan
5+:
$ 4.5914
25+:
$ 4.2513
50+:
$ 4.0132
100+:
$ 3.9112
500+:
$ 3.8431
2500+:
$ 3.7581
5000+:
$ 3.7241
10000+:
$ 3.6731
Quantity
5+
25+
50+
100+
500+
Price
$4.5914
$4.2513
$4.0132
$3.9112
$3.8431
Price $ 4.5914 $ 4.2513 $ 4.0132 $ 3.9112 $ 3.8431
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8762) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.048 Ω

Technical parameters/dissipated power: 1.4 W

Technical parameters/threshold voltage: 1.5 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOP

External dimensions/packaging: TSOP

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3588DV-T1-E3 SI3588DV-T1-E3 Vishay Intertechnology 类似代替 TSOP-6
VISHAY SI3588DV-T1-E3 双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
SI3588DV-T1-E3 SI3588DV-T1-E3 VISHAY 类似代替 TSOP-6
VISHAY SI3588DV-T1-E3 双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
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