Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.08 Ω
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 450 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rated power (Max): 830mW, 83mW
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3585CDV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP |
VISHAY SI3585CDV-T1-GE3 双路场效应管, MOSFET, N和P沟道, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
|
||
SI3588DV-T1-GE3
|
VISHAY | 完全替代 | TSOP-6 |
N和P通道20 - V(D -S)的MOSFET N- and P-Channel 20-V (D-S) MOSFET
|
||
SI3588DV-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSOP |
N和P通道20 - V(D -S)的MOSFET N- and P-Channel 20-V (D-S) MOSFET
|
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