Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/rated power (Max): 1.08 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3585CDV-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSOP |
MOSFET N/P-CH 20V 3.9A 6TSOP
|
||
SI3588DV-T1-GE3
|
VISHAY | 完全替代 | TSOP-6 |
MOSFET N/P-CH 20V 2.5A 6-TSOP
|
||
SI3588DV-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSOP |
MOSFET N/P-CH 20V 2.5A 6-TSOP
|
||
SI3850ADV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
MOSFET N/P-CH 20V 1.4A 6-TSOP
|
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