Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 1.80 A
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3585DV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET N/P-CH 20V 2A/1.5A 6-TSOP
|
||
SI3585DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET N/P-CH 20V 2A/1.5A 6-TSOP
|
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