Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 19.0 A
Technical parameters/thermal resistance: 130℃/W (RθJA)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/length: 3.1 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3585DV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET N/P-CH 20V 2A 6-TSOP
|
||
SI3585DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET N/P-CH 20V 2A 6-TSOP
|
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