Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 830mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.40 A
Technical parameters/dissipated power (Max): 830mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 功能相似 | SOT-163 |
N-Channel MOSFET
|
||
SIA814DJ-T1-GE3
|
Vishay Intertechnology | 功能相似 | SC-70-6 |
MOSFET 30V 4.5A 6.5W 61mohm @ 10V
|
||
|
|
VISHAY | 功能相似 | SC-70-6 |
MOSFET 30V 4.5A 6.5W 61mohm @ 10V
|
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