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Model SI3812DV
Description SI3812DV Composite field-effect transistor MOSFET+Schottky diode 20V 2A 500mA/0.5A 0.48V SOT-163/SOT23-6 marking/marking 12
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Brand: Vishay Semiconductor
Packaging SOT-163
Delivery time
Packaging method
Standard packaging quantity 1
0.92  yuan 0.92yuan
10+:
$ 1.2447
50+:
$ 1.1802
100+:
$ 1.1341
300+:
$ 1.1064
500+:
$ 1.0787
1000+:
$ 1.0511
2500+:
$ 1.0096
5000+:
$ 1.0004
Quantity
10+
50+
100+
300+
500+
Price
$1.2447
$1.1802
$1.1341
$1.1064
$1.0787
Price $ 1.2447 $ 1.1802 $ 1.1341 $ 1.1064 $ 1.0787
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7016) Minimum order quantity(10)
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Encapsulation parameters/Encapsulation: SOT-163

External dimensions/packaging: SOT-163

Other/maximum source drain voltage VdsDrain Source Voltage: NChannel N-Channel

Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 20V

Other/Maximum Drain Current IdDrain Current: 12V

Other/source drain on resistance RdsDrain Source On State Resistance: 2A

Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 125mΩ@ VGS =4.5V, ID =2.4A

Other/dissipative power PdPower Dissipation: 0.6V

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