Technical parameters/dissipated power: 2W (Ta), 4.2W (Tc)
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Input capacitance (Ciss): 2010pF @6V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 4.2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC606P
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC606P 晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
|
||
SI3473CDV-T1-E3
|
Vishay Semiconductor | 类似代替 |
TRANSISTOR 8000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
|
|||
SI3473CDV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
TRANSISTOR 8000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
|
||
SI3473CDV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
TRANSISTOR 8000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
|
||
SI3473DV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
MOSFET P-CH 12V 5.9A 6-TSOP
|
||
SI3473DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 12V 5.9A 6-TSOP
|
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