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Model FDC606P
Description FAIRCHILD SEMICONDUCTOR FDC606P 晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
Product QR code
Brand: Fairchild
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.98  yuan 1.98yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2428) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-12.0 V

 

Technical parameters/rated current:

-6.00 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.026 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.6 W

 

Technical parameters/Input capacitance:

1.70 nF

 

Technical parameters/gate charge:

18.0 nC

 

Technical parameters/drain source voltage (Vds):

12 V

 

Technical parameters/Leakage source breakdown voltage:

-12.0 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

6.00 A, -6.00 A

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

1699pF @6V(Vds)

 

Technical parameters/rated power (Max):

800 mW

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.6 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.7 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

O

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 VISHAY 功能相似 TSOP-6
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
PDF
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 Vishay Siliconix 功能相似 TSOT-23-6
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
PDF
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 Vishay Semiconductor 功能相似 TSOP
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
PDF
SI3473DV-T1-E3 SI3473DV-T1-E3 VISHAY 功能相似 TSOP-6
晶体管, MOSFET, P沟道, -5.9 A, -12 V, 0.019 ohm, -4.5 V, -1 V
PDF
SI3473DV-T1-E3 SI3473DV-T1-E3 Vishay Siliconix 功能相似 TSOT-23-6
晶体管, MOSFET, P沟道, -5.9 A, -12 V, 0.019 ohm, -4.5 V, -1 V
PDF

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