Technical parameters/dissipated power: 1.14W (Ta)
Technical parameters/dissipated power (Max): 1.14W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3440DV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
Trans MOSFET N-CH 150V 1.2A 6Pin TSOP T/R
|
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