Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.31 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 1.50 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3440DV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
VISHAY SI3440DV-T1-E3 晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
|
||
SI3440DV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
Trans MOSFET N-CH 150V 1.2A 6Pin TSOP T/R
|
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