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Model SI2309DS-T1-E3
Description PChannel 60-V (D-S) MOSFET P-Channel 60-V (D-S) MOSFET
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Brand: Vishay Semiconductor
Packaging SOT-23
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6244) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.275 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/drain source voltage (Vds): -60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): -1.25 A

Technical parameters/rise time: 11.5 ns

Technical parameters/descent time: 7.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 Vishay Intertechnology 类似代替
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
PDF
SI2309DS-T1 SI2309DS-T1 Vishay Semiconductor 功能相似 SOT-23
MOSFET 60V 1.25A
SI2309DS-T1 SI2309DS-T1 VISHAY 功能相似 SOT-23-3
MOSFET 60V 1.25A
PDF
SI2309DS-T1-GE3 SI2309DS-T1-GE3 VISHAY 功能相似 SOT-23-3
MOSFET 60V 1.25A 1.25W 340mohm @ 10V
PDF

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