Technical parameters/drain source resistance: 340 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -1.25 A
Technical parameters/rise time: 11.5 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: Non-Compliant
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