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Model SI2309DS-T1-E3
Description MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Product QR code
Brand: Vishay Siliconix
Packaging SOT-23-3
Delivery time
Packaging method
Standard packaging quantity 1
4.29  yuan 4.29yuan
5+:
$ 5.7888
25+:
$ 5.3600
50+:
$ 5.0598
100+:
$ 4.9312
500+:
$ 4.8454
2500+:
$ 4.7382
5000+:
$ 4.6954
10000+:
$ 4.6310
Quantity
5+
25+
50+
100+
500+
Price
$5.7888
$5.3600
$5.0598
$4.9312
$4.8454
Price $ 5.7888 $ 5.3600 $ 5.0598 $ 4.9312 $ 4.8454
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1585) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.275 Ω

Technical parameters/dissipated power: 1.25 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.25W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 Vishay Intertechnology 类似代替
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
PDF
SI2309DS-T1 SI2309DS-T1 Vishay Semiconductor 功能相似 SOT-23
MOSFET 60V 1.25A
SI2309DS-T1 SI2309DS-T1 VISHAY 功能相似 SOT-23-3
MOSFET 60V 1.25A
PDF
SI2309DS-T1-GE3 SI2309DS-T1-GE3 VISHAY 功能相似 SOT-23-3
MOSFET 60V 1.25A 1.25W 340mohm @ 10V
PDF

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