Technical parameters/drain source resistance: 330 mΩ
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 37 ns
Technical parameters/Input capacitance (Ciss): 155pF @15V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/dissipated power (Max): 1W (Ta), 2.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2303BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
|
||
SI2303BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
|
||
SI2303BDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
Trans MOSFET P-CH 30V 1.3A 3Pin SOT-23
|
||
SI2303BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 30V 1.3A 3Pin SOT-23
|
||
SI2303CDS-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
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