Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 200 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 700 mW
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -1.49 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2303BDS-T1
|
Vishay Semiconductor | 完全替代 | SOT-23 |
MOSFET P-CH 30V 1.49A SOT23
|
||
SI2303BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
|
||
SI2303BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
|
||
SI2303CDS-T1-GE3
|
Vishay Dale | 类似代替 |
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
|||
SI2303CDS-T1-GE3
|
Vishay Intertechnology | 类似代替 |
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
|||
SI2303CDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review