Technical parameters/drain source resistance: 1.9 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 270 mW
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: ±20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 300 mA
Technical parameters/thermal resistance: 400℃/W (RθJA)
Technical parameters/rated power (Max): 270 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2.2 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1551DL-T1-E3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
MOSFET N/P-CH 20V SC70-6
|
||
SI1553CDL-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6Pin SOT-363
|
||
SI1553CDL-T1-GE3
|
VISHAY | 类似代替 | SC-70-6 |
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6Pin SOT-363
|
||
SI1553DL-T1-E3
|
VISHAY | 类似代替 | SC-70-6 |
MOSFET N/P-CH 20V SC70-6
|
||
SI1553DL-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-363-6 |
MOSFET N/P-CH 20V SC70-6
|
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