Technical parameters/drain source resistance: 390mΩ,850mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 0.29 W
Technical parameters/threshold voltage: 1.5V,1.5V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 700mA,500mA
Technical parameters/Input capacitance (Ciss): 38pF @10V(Vds)
Technical parameters/rated power (Max): 340 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 290 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1551DL-T1-E3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
MOSFET N/P-CH 20V SC70-6
|
||
SI1553DL-T1-E3
|
VISHAY | 类似代替 | SC-70-6 |
MOSFET N/P-CH 20V SC70-6
|
||
SI1553DL-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-363-6 |
MOSFET N/P-CH 20V SC70-6
|
||
SI1563DH-T1-E3
|
Vishay Semiconductor | 类似代替 | SC-70-6 |
MOSFET N/P-CH 20V 1.13A SC70-6
|
||
|
|
Vishay Intertechnology | 类似代替 | SOT-363 |
MOSFET N/P-CH 20V 1.13A SC70-6
|
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