Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 280mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 250 mA
Technical parameters/dissipated power (Max): 280mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1330EDL-T1-GE3
|
VISHAY | 完全替代 | SOT-323-3 |
SI1330EDL-T1-GE3 N-channel MOSFET Transistor, 0.24A, 60V, 3Pin SOT-323
|
||
SSM3K7002BFU
|
Toshiba | 功能相似 | SOT-323 |
SSM3K7002BFU N沟道场效应管 60V 0.2A SOT323 代码 NM 高速开关 模拟开关 低导通电阻
|
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