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Model SI1330EDL-T1-GE3
Description N Channel MOSFET, 60V to 90V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: VISHAY
Packaging SOT-323-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.65  yuan 2.65yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6620) Minimum order quantity(1)
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Technical parameters/drain source resistance:

2.5 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

0.31 W

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Continuous drain current (Ids):

240mA

 

Technical parameters/rise time:

4.8 ns

 

Technical parameters/rated power (Max):

280 mW

 

Technical parameters/descent time:

9.6 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

280 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-323-3

 

Dimensions/Length:

2.2 mm

 

Dimensions/Width:

1.35 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

SOT-323-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

3000

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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