Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: Dual P
Technical parameters/dissipated power: 0.25 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 190mA
Technical parameters/Input capacitance (Ciss): 23pF @25V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/length: 1.7 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1025X-T1-E3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
Dual P-Channel 60V 4Ω Surface Mount TrenchFET Power Mosfet - SC-89-6
|
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