Technical parameters/drain source resistance: | 4.00 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Leakage source breakdown voltage: | -60.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 500 mA |
|
Technical parameters/Input capacitance (Ciss): | 23pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-89-6 |
|
Dimensions/Packaging: | SC-89-6 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1025X-T1-GE3
|
VISHAY | 类似代替 | SC-89-6 |
Si1025X Series P-Channel 60V 4Ω 0.25W(1/4W) Surface Mount Power Mosfet - SC-89
|
||
SI1025X-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
Si1025X Series P-Channel 60V 4Ω 0.25W(1/4W) Surface Mount Power Mosfet - SC-89
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review