Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 210 @2mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT6428 单晶体管 双极, NPN, 50 V, 700 MHz, 350 mW, 500 mA, 250 hFE
|
||
MMBT6428
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT6428 单晶体管 双极, NPN, 50 V, 700 MHz, 350 mW, 500 mA, 250 hFE
|
||
|
|
Samsung | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBT6428 单晶体管 双极, NPN, 50 V, 700 MHz, 350 mW, 500 mA, 250 hFE
|
|||
MSD601-RT1
|
ON Semiconductor | 完全替代 | SOT-23-3 |
NPN通用放大器晶体管表面贴装 NPN General Purpose Amplifier Transistors Surface Mount
|
||
MSD601-RT2
|
ON Semiconductor | 类似代替 | SC-59 |
SC-59 NPN 50V 0.1A
|
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