Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 210 @2mA, 10V |
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Technical parameters/rated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSD601-RT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN General Purpose Amplifier Transistors Surface Mount
|
||
MSD601-RT1G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
MSD601-R: NPN 双极晶体管
|
||
MSD601-RT2
|
ON Semiconductor | 类似代替 | SC-59 |
SC-59 NPN 50V 0.1A
|
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