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Model SD2903
Description RF Power Transistors HF/VHF/UHF N-channel MOSFETs RF POWER TRANSISTORS HF/VHF/UHF N-channel MOSFETs
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Packaging M229
Delivery time
Packaging method Box
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1103) Minimum order quantity(1)
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Technical parameters/frequency: 400 MHz

Technical parameters/rated voltage (DC): 65.0 V

Technical parameters/rated current: 5 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/input capacitance: 23.0 pF

Technical parameters/drain source voltage (Vds): 65.0 V

Technical parameters/leakage source breakdown voltage: 65.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 5.00 A

Technical parameters/output power: 30 W

Technical parameters/gain: 15 dB

Technical parameters/test current: 100 mA

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: M229

External dimensions/packaging: M229

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Box

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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