Technical parameters/frequency: 130 MHz
Technical parameters/number of pins: 4
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.5 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/DC current gain (hFE): 25
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
|
||
BCP56T3G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR BCP56T3G Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE 新
|
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