Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -35.0 V
Technical parameters/rated current: -2.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 35 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 100 @1.5A, 1.5V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/width: 1.5 mm
External dimensions/packaging: SOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBT35200MT1G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
PNP 晶体管，超过 1A，On Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
||
MBT35200MT2G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
TSOP PNP 35V 2A
|
||
SNSS35200MR6T1G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
TSOP PNP 35V 2A
|
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