Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/power supply current: 110 mA
Technical parameters/number of pins: 64
Technical parameters/digits: 8, 16
Technical parameters/access time: 90 ns
Technical parameters/memory capacity: 16000000 B
Technical parameters/access time (Max): 90 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: BGA
External dimensions/packaging: BGA
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Consumer electronics, industrial, communication and networking, computers and computer peripherals
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
AMD | 功能相似 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
|||
S29GL128P90FFIR10
|
Spansion | 功能相似 | BGA-64 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
S29GL128P90FFIR10
|
Cypress Semiconductor | 功能相似 | BGA-64 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
S29GL128P90FFIR13
|
Cypress Semiconductor | 完全替代 | BGA |
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8Bit/16Bit 90ns 64Pin Fortified BGA T/R
|
||
S29GL128P90FFIR20
|
Cypress Semiconductor | 功能相似 | BGA-64 |
SPANSION S29GL128P90FFIR20 芯片, 闪存, 128MB, 90NS, 64-BGA
|
||
S29GL128P90FFIR20
|
AMD | 功能相似 |
SPANSION S29GL128P90FFIR20 芯片, 闪存, 128MB, 90NS, 64-BGA
|
|||
S29GL128P90FFIR22
|
Spansion | 完全替代 | LBGA |
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 90ns 64Pin Fortified BGA T/R
|
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