Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -2.50 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.14 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 580pF @10V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1.25W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTUD3170NZT5G
|
ON Semiconductor | 功能相似 | SOT-963-6 |
ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963
|
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