Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 1.50 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 240 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 800 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 1.50 A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 80pF @10V(Vds)
Technical parameters/rated power (Max): 800 mW
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 320mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2 mm
External dimensions/width: 1.7 mm
External dimensions/height: 0.82 mm
External dimensions/packaging: SOT-323-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RTF025N03TL
|
ROHM Semiconductor | 类似代替 | SOT-323-3 |
N-沟道 0.8 W 30 V 98 mOhm 表面贴装 2.5 V 驱动 MosFet - TUMT-3
|
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