Technical parameters/rated voltage (DC): | 30.0 V |
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Technical parameters/rated current: | 2.50 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 48 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 800 mW |
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Technical parameters/threshold voltage: | 1.5 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/Continuous drain current (Ids): | 2.50 A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 270pF @10V(Vds) |
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Technical parameters/rated power (Max): | 800 mW |
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Technical parameters/descent time: | 11 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 800mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Length: | 2 mm |
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Dimensions/Width: | 1.7 mm |
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Dimensions/Height: | 0.77 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standard Alternative material
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