Technical parameters/rated power: 125 mW
Technical parameters/resistance: 1 MΩ
Technical parameters/resistance deviation: ±1 %
Technical parameters/rated voltage: 200 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Axial Leaded
External dimensions/packaging: Axial Leaded
Physical parameters/temperature coefficient: ±100 ppm/℃
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RN55D1004FB14
|
Vishay Semiconductor | 完全替代 | Axial Leaded |
VISHAY RN55D1004FB14 金属膜电阻, 1MΩ, 125mW, 1%
|
||
RN55D1004FB14
|
VISHAY | 完全替代 | B14 |
VISHAY RN55D1004FB14 金属膜电阻, 1MΩ, 125mW, 1%
|
||
RN55D1004FB14
|
Vishay Dale | 完全替代 | Axial |
VISHAY RN55D1004FB14 金属膜电阻, 1MΩ, 125mW, 1%
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review