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Model RN55D1004FB14
Description VISHAY RN55D1004FB14 金属膜电阻, 1MΩ, 125mW, 1%
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Brand: Vishay Semiconductor
Packaging Axial Leaded
Delivery time
Packaging method
Standard packaging quantity 1
0.39  yuan 0.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8190) Minimum order quantity(1)
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Technical parameters/tolerances:

±1 %

 

Technical parameters/rated power:

125 mW

 

Technical parameters/resistance:

1 MΩ

 

Technical parameters/resistance deviation:

±1 %

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/rated voltage:

200 V

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

Axial Leaded

 

Dimensions/Length:

7.37 mm

 

Dimensions/Packaging:

Axial Leaded

 

Physical parameters/temperature coefficient:

±100 ppm/℃

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RN55D1004F RN55D1004F International Resistive 类似代替 Axial Leaded
INTERNATIONAL RESISTIVE RN55D1004F 金属釉面电阻, 1MΩ, 125MW, 1%, 整卷
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RN55D1004FRE6 RN55D1004FRE6 Vishay Dale 完全替代 Axial
VISHAY RN55D1004FRE6 金属膜电阻, 1MΩ, 125mW, 1%
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RN55D1004FRE6 RN55D1004FRE6 Vishay Semiconductor 完全替代 Axial Leaded
VISHAY RN55D1004FRE6 金属膜电阻, 1MΩ, 125mW, 1%
PDF

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