Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.1 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30
Technical parameters/Maximum current amplification factor (hFE): 30
Technical parameters/rated power (Max): 100 mW
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJY4005R
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Fairchild | 功能相似 | SOT-490 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
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PDTC143EE,115
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Nexperia | 功能相似 | SOT-416 |
NXP PDTC143EE,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-416
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PDTC143EE,115
|
NXP | 功能相似 | SOT-416-3 |
NXP PDTC143EE,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-416
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