Technical parameters/dissipated power: | 0.15 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 30 @10mA, 5V |
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Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 150 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-416 |
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Dimensions/Packaging: | SOT-416 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTC143EE,115
|
Nexperia | 类似代替 | SOT-416 |
Trans Digital BJT NPN 50V 100mA Automotive 3Pin SC-75 T/R
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PDTC143EE,115
|
NXP | 类似代替 | SOT-416-3 |
Trans Digital BJT NPN 50V 100mA Automotive 3Pin SC-75 T/R
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|
Philips | 类似代替 |
NPN电阻配备晶体管; R1 = 4.7千欧, R2 = 4.7 kΩ的 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
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NXP | 类似代替 | SC-89 |
NPN电阻配备晶体管; R1 = 4.7千欧, R2 = 4.7 kΩ的 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
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