Technical parameters/breakdown voltage (collector emitter): 18 V
Technical parameters/gain: 13dB ~ 15.5dB
Technical parameters/minimum current amplification factor (hFE): 50 @50mA, 5V
Technical parameters/rated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: Micro-X
External dimensions/packaging: Micro-X
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF581
|
Motorola | 类似代替 | Micro-X |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
||
|
|
Advanced Semiconductor | 类似代替 |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
|||
MRF581
|
Microsemi | 类似代替 | Macro-X |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
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