Technical parameters/dissipated power: | 1250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 18 V |
|
Technical parameters/gain: | 13dB ~ 15.5dB |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @50mA, 5V |
|
Technical parameters/rated power (Max): | 1.25 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | Macro-X |
|
Dimensions/Height: | 2.54 mm |
|
Dimensions/Packaging: | Macro-X |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Kexin | 功能相似 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
|
|||
2SC3357
|
NEC | 功能相似 | SOT-89 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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||
2SC3357
|
Renesas Electronics | 功能相似 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
|
|||
BFQ18A
|
NXP | 功能相似 | TO-243 |
NXP ### 双极性晶体管，NXP Semiconductors
|
||
BFQ19
|
NXP | 功能相似 | SOT-89 |
NXP BFQ19 晶体管 双极-射频, NPN, 15 V, 5.5 GHz, 1 W, 100 mA, 80 hFE
|
||
MRF581
|
Motorola | 功能相似 | Micro-X |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
|
||
|
|
Advanced Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
|
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MRF581
|
Microsemi | 功能相似 | Macro-X |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
|
||
|
|
Advanced Semiconductor | 功能相似 | Macro-X |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
||
MRF581G
|
Microsemi | 类似代替 | Micro-X |
Trans RF BJT NPN 18V 0.2A 4Pin Macro-X
|
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