Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.036 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1900 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 42A
Technical parameters/rise time: 56 ns
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 3.8W (Ta), 160W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1310NSTRRPBF
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 100V 42A
|
||
STB35NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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